Phase stability of hafnium oxide and zirconium oxide on silicon substrate

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dc.creatorShin, Dongwon
dc.creatorLiu, Zi-Kui
dc.date2007-08-31
dc.date.accessioned2026-07-07T08:26:53Z
dc.date.available2026-07-07T08:26:53Z
dc.descriptionPhase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO$_2$/Si and ZrO$_2$/Si interfaces are stable in a wide temperature range and silicide may form at low temperatures, partially at the HfO$_2$/Si interface.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0708.4356
dc.identifierhttp://arxiv.org/abs/0708.4356
dc.identifierScripta Materialia 57 (3): 201-204 (2007)
dc.identifierdoi:10.1016/j.scriptamat.2007.04.011
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137098
dc.subjectMaterials Science
dc.titlePhase stability of hafnium oxide and zirconium oxide on silicon substrate
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