Ground State Energy of Current Carriers in Graphene

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dc.creatorRatnikov, P. V.
dc.creatorSilin, A. P.
dc.date2008-01-30
dc.date.accessioned2026-07-07T08:57:16Z
dc.date.available2026-07-07T08:57:16Z
dc.descriptionThe ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.
dc.description9 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0801.4642
dc.identifierhttp://arxiv.org/abs/0801.4642
dc.identifierKratkie Soobshcheniya po Fizike, No. 1, pp. 46-56 (2008) [Bulletin of the Lebedev Physics Institute]
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146905
dc.subjectOther Condensed Matter
dc.subjectMaterials Science
dc.titleGround State Energy of Current Carriers in Graphene
dc.typetext

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