Spin extraction from a non-magnetic semiconductor
| dc.creator | Bratkovsky, A. M. | |
| dc.creator | Osipov, V. V. | |
| dc.date | 2003-07-25 | |
| dc.date | 2003-10-10 | |
| dc.date.accessioned | 2026-07-07T02:52:37Z | |
| dc.date.available | 2026-07-07T02:52:37Z | |
| dc.description | New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current. | |
| dc.description | 4 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0307656 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0307656 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/21909 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Spin extraction from a non-magnetic semiconductor | |
| dc.type | text |