Compensation, interstitial defects and ferromagnetism in diluted semiconductors

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dc.creator~Bouzerar, Georges
dc.creatorZiman, Timothy
dc.creatorKudrnovský, Josef
dc.date2006-06-20
dc.date.accessioned2026-07-07T07:12:46Z
dc.date.available2026-07-07T07:12:46Z
dc.descriptionWe present a quantitative theory for ferromagnetism in diluted III-V ferromagnetic semi-conductors in the presence of the two types of defects commonly supposed to be responsible for compensation: As anti-sites and Mn interstitials. In each case we reduce the description to that of an effective random Heisenberg model with exchange integrals between active magnetic impurities provided by ab initio calculation. The effective magnetic Hamiltonian is then solved by a semi-analytical method (locally self-consistent RPA), where disorder is treated exactly. Measured Curie temperatures are shown to be inconsistent with the hypothesis that As anti-sites provide the dominant mechanism for compensation. In contrast, if we assume that Mn interstitials are the main source for compensation, we obtain a very good agreement between the calculated Curie temperature and the measured values, in both as-grown and annealed samples.
dc.identifierhttps://arxiv.org/abs/cond-mat/0606525
dc.identifierhttp://arxiv.org/abs/cond-mat/0606525
dc.identifierPhys. Rev. B 72, 125207 (2005) (5 pages)
dc.identifierdoi:10.1103/PhysRevB.72.125207
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112193
dc.subjectDisordered Systems and Neural Networks
dc.titleCompensation, interstitial defects and ferromagnetism in diluted semiconductors
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