Electronic structure of graphite/6H-SiC interfaces

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dc.creatorSeyller, Th.
dc.creatorEmtsev, K. V.
dc.creatorSpeck, F.
dc.creatorGao, K. -Y.
dc.creatorLey, L.
dc.date2006-10-09
dc.date.accessioned2026-07-07T07:27:24Z
dc.date.available2026-07-07T07:27:24Z
dc.descriptionWe have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
dc.description6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 3rd - 7th, 2006. Revised version. Proceeding will appear in Materials Science Forum
dc.identifierhttps://arxiv.org/abs/cond-mat/0610220
dc.identifierhttp://arxiv.org/abs/cond-mat/0610220
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117365
dc.subjectMaterials Science
dc.titleElectronic structure of graphite/6H-SiC interfaces
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