Coulomb Blockade Oscillations of Conductance at Finite Energy Level Spacing in a Quantum Dot

dc.creatorVorojtsov, Serguei
dc.date2002-04-15
dc.date2004-10-20
dc.date.accessioned2026-07-07T02:45:04Z
dc.date.available2026-07-07T02:45:04Z
dc.descriptionWe find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels in a grain in the sequential tunneling approximation. In the case of spinless electrons our theory describes transport through a dot in the quantum Hall regime. In the case of spin-1/2 electrons we analyze the line shape of a peak, shift in the position of the peak's maximum as a function of temperature, and the values of the conductance in the odd and even valleys.
dc.descriptionRevTex, 13 pages, 13 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0204329
dc.identifierhttp://arxiv.org/abs/cond-mat/0204329
dc.identifierInternational Journal of Modern Physics B, Vol. 18, No. 30 (2004) 3915-3940
dc.identifierdoi:10.1142/S0217979204026706
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19173
dc.subjectMesoscale and Nanoscale Physics
dc.titleCoulomb Blockade Oscillations of Conductance at Finite Energy Level Spacing in a Quantum Dot
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