Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density

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dc.creatorRobinson, John P
dc.creatorSchomerus, Henning
dc.date2007-06-11
dc.date2007-10-11
dc.date.accessioned2026-07-07T08:35:16Z
dc.date.available2026-07-07T08:35:16Z
dc.descriptionWe investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.
dc.description11 pages, 7 figures, published version including a section on the sharpness of thresholds
dc.identifierhttps://arxiv.org/abs/0706.1506
dc.identifierhttp://arxiv.org/abs/0706.1506
dc.identifierPhys. Rev. B 76, 115430 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.115430
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/139694
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density
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