Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm

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dc.creatorFigueira, D. S. L.
dc.creatorFrateschi, N. C.
dc.date2007-11-09
dc.date.accessioned2026-07-07T08:42:14Z
dc.date.available2026-07-07T08:42:14Z
dc.descriptionMicrodisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence of bow-tie and diamond scars. These modes indicate the high quality of the resonators and the potentiality for achieving amorphous silicon microcavity lasers.
dc.description18 pages, 4 figures. Submitted
dc.identifierhttps://arxiv.org/abs/0711.1549
dc.identifierhttp://arxiv.org/abs/0711.1549
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141889
dc.subjectOptics
dc.titleRare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm
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