Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

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dc.creatorPeng, Haibing
dc.creatorGolovchenko, Jene A.
dc.date2005-08-29
dc.date.accessioned2026-07-07T03:06:26Z
dc.date.available2026-07-07T03:06:26Z
dc.descriptionCarbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.
dc.description12 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0508670
dc.identifierhttp://arxiv.org/abs/cond-mat/0508670
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26804
dc.subjectMesoscale and Nanoscale Physics
dc.titleCoaxial p- and n-type carbon nanotube transistors with dopant-selective coatings
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