Random gap model for graphene and graphene bilayers

dc.creatorZiegler, K.
dc.date2008-11-24
dc.date.accessioned2026-07-07T12:55:19Z
dc.date.available2026-07-07T12:55:19Z
dc.descriptionThe effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient and conductivity) are calculated at the neutrality point. All these quantities vanish at a critical value of the average staggered potential, signaling a continuous transition to an insulating behavior. The calculations are based on the self-consistent Born approximation for the one-particle scattering rate and a massless mode of the two-particle Green's function which is created by spontaneous symmetry breaking. Transport quantities are directly linked to the one-particle scattering rate. Moreover, the effect of disorder is very weak in the case of a monolayer but much stronger in bilayer graphene.
dc.description5 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/0811.3932
dc.identifierhttp://arxiv.org/abs/0811.3932
dc.identifierPhys. Rev. Lett. 102, 126802 (2009)
dc.identifierdoi:10.1103/PhysRevLett.102.126802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/224215
dc.subjectMesoscale and Nanoscale Physics
dc.titleRandom gap model for graphene and graphene bilayers
dc.typetext

Files

Collections