Spin-dependent transport of carriers in semiconductors

dc.creatorWinkler, R.
dc.date2006-05-15
dc.date.accessioned2026-07-07T07:08:57Z
dc.date.available2026-07-07T07:08:57Z
dc.descriptionThis article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection of spin-polarized carriers in semiconductors. Then we review non-equilibrium spin flow including spin drift and diffusion caused by electric fields and concentration gradients. A controlled spin precession is possible both in external magnetic fields and in effective magnetic fields due to a broken inversion symmetry. Although the Coulomb interaction does not couple to the spin degree of freedom, it affects the spin-dependent transport via the spin Coulomb drag. In gyrotropic media, the optical creation of spin-oriented electrons gives rise to spin photocurrents, which reverse their direction when the radiation helicity is changed from left-handed to right-handed. The reverse process is possible, too, i.e., an electric current in a gyrotropic medium gives rise to a spin polarization in the bulk of the sample.
dc.description24 pages, 10 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0605390
dc.identifierhttp://arxiv.org/abs/cond-mat/0605390
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/110897
dc.subjectMesoscale and Nanoscale Physics
dc.titleSpin-dependent transport of carriers in semiconductors
dc.typetext

Files

Collections