Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters

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dc.creatorWang, K. Y.
dc.creatorSawicki, M.
dc.creatorEdmonds, K. W.
dc.creatorCampion, R. P.
dc.creatorRushforth, A. W.
dc.creatorFreeman, A. A.
dc.creatorFoxon, C. T.
dc.creatorGallagher, B. L.
dc.creatorDietl, T.
dc.date2005-12-15
dc.date.accessioned2026-07-07T06:53:23Z
dc.date.available2026-07-07T06:53:23Z
dc.descriptionWe demonstrate that low concentrations of a secondary magnetic phase in (Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without significantly degrading the Curie temperature or saturation magnetisation. Magnetic measurements indicate that the secondary phase consists of MnAs nanoclusters, of average size ~7nm. This approach to controlling the coercivity while maintaining high Curie temperature, may be important for realizing ferromagnetic semiconductor based devices.
dc.description8 pages,4 figures. accepted for publication in Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0512353
dc.identifierhttp://arxiv.org/abs/cond-mat/0512353
dc.identifierApplied Physics Letters 88, 022510 (2006)
dc.identifierdoi:10.1063/1.2162856
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105568
dc.subjectMaterials Science
dc.titleControl of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
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