Direct measurements of the fractional quantum Hall effect gaps

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dc.creatorKhrapai, V. S.
dc.creatorShashkin, A. A.
dc.creatorTrokina, M. G.
dc.creatorDolgopolov, V. T.
dc.creatorPellegrini, V.
dc.creatorBeltram, F.
dc.creatorBiasiol, G.
dc.creatorSorba, L.
dc.date2007-02-16
dc.date.accessioned2026-07-07T08:26:57Z
dc.date.available2026-07-07T08:26:57Z
dc.descriptionWe measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.
dc.identifierhttps://arxiv.org/abs/cond-mat/0702390
dc.identifierhttp://arxiv.org/abs/cond-mat/0702390
dc.identifierPhys. Rev. Lett. 99, 086802 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.086802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137116
dc.subjectStrongly Correlated Electrons
dc.titleDirect measurements of the fractional quantum Hall effect gaps
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