Alkanethiol-Based Single-Molecule Transistors
| dc.creator | Ma, Chun-Lan | |
| dc.creator | Nghiem, Diu | |
| dc.creator | Chen, Yu-Chang | |
| dc.date | 2008-04-23 | |
| dc.date | 2008-12-02 | |
| dc.date.accessioned | 2026-07-07T12:59:57Z | |
| dc.date.available | 2026-07-07T12:59:57Z | |
| dc.description | The transport properties of unsubstituted and amino-substituted butanethiol molecules sandwiched between Au electrodes are investigated by using first-principles approaches. New states are observed around the Fermi levels when -NH2 is substituted for -H in the bridging butanethiol. The amino-substituted states lead to a sharp increase of the current which is credited to the resonant tunneling in the junction. We observe a novel conductance peak at VSD = 0.1 V and negative differential resistance (NDR) in a certain range of source-drain bias. In addition to the I-VSD characteristics, we also investigate the current as a function of gate voltage (I-VG) and find that, for a fixed source-drain bias (VSD = 0.01 V), the gate voltage can modulate the conductance by up to 30 times in the amino-substituted butanethiol junction. These I-VG characteristics suggest that the amino-substituted butanethiol molecular junction may be a promising candidate for field-effect transistors. | |
| dc.description | 4 pages | |
| dc.identifier | https://arxiv.org/abs/0804.3637 | |
| dc.identifier | http://arxiv.org/abs/0804.3637 | |
| dc.identifier | Applied Physics Letters, 93 222111 (2008) | |
| dc.identifier | doi:10.1063/1.3043438 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/225732 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Alkanethiol-Based Single-Molecule Transistors | |
| dc.type | text |