A possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position

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dc.creatorKolobov, A. V.
dc.creatorMishchenko, A. S.
dc.creatorFons, P.
dc.creatorYakubenya, S. M.
dc.creatorTominaga, J.
dc.date2008-03-14
dc.date.accessioned2026-07-07T09:26:51Z
dc.date.available2026-07-07T09:26:51Z
dc.descriptionWe propose that the driving force of an ultrafast crystalline-to-amorphous transition in phase-change memory alloys are strained bonds existing in the (metastable) crystalline phase. For the prototypical example of GST, we demonstrate that upon breaking of long Ge-Te bond by photoexcitation Ge ion shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase.
dc.description6 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0803.2127
dc.identifierhttp://arxiv.org/abs/0803.2127
dc.identifierJ. Phys.: Condens. Matter, vol. 19 (2007) 455209 (7pp)
dc.identifierdoi:10.1088/0953-8984/19/45/455209
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156903
dc.subjectMaterials Science
dc.titleA possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position
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