Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Simple item page
dc.creatorMiller, Casey W.
dc.creatorLi, Zhi-Pan
dc.creatorSchuller, Ivan K.
dc.creatorDave, R. W.
dc.creatorSlaughter, J. M.
dc.creatorAkerman, Johan
dc.date2007-09-22
dc.date.accessioned2026-07-07T08:31:40Z
dc.date.available2026-07-07T08:31:40Z
dc.descriptionPrecisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.
dc.description4pgs, 3 figs
dc.identifierhttps://arxiv.org/abs/0709.3556
dc.identifierhttp://arxiv.org/abs/0709.3556
dc.identifierPRL 99, 047206 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.047206
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138567
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleDynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions
dc.typetext

Files

Collections

arXiv