Broadening processes in GaAs delta-doped quantum wire superlattices

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dc.creatorFerrus, T.
dc.creatorGoutiers, B.
dc.creatorGalibert, J.
dc.creatorMichelini, F.
dc.date2007-08-13
dc.date.accessioned2026-07-07T08:23:23Z
dc.date.available2026-07-07T08:23:23Z
dc.descriptionWe use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice and a 1D quantum wire superlattice generated from the first one by controlled dislocation slips. We deduce first the origin of the broadening from the damping factor in the Shubnikov de Haas curves in various configurations of the magnetic field and the measured current for both kinds of superlattice. Then, we write a general formula for the resistivity in the Quantum Hall effect introducing a dephasing factor we link to the process of localization.
dc.identifierhttps://arxiv.org/abs/0708.1674
dc.identifierhttp://arxiv.org/abs/0708.1674
dc.identifierSuperlattices and Microstructures, 30, 4, p 215 (2001)
dc.identifierdoi:10.1006/spmi.2001.1007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135980
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleBroadening processes in GaAs delta-doped quantum wire superlattices
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