Formation and decay of electron-hole droplets in diamond

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dc.creatorJiang, J. H.
dc.creatorWu, M. W.
dc.creatorNagai, M.
dc.creatorKuwata-Gonokami, M.
dc.date2004-08-10
dc.date2004-11-21
dc.date.accessioned2026-07-07T06:20:18Z
dc.date.available2026-07-07T06:20:18Z
dc.descriptionWe study the formation and decay of electron-hole droplets in diamonds at both low and high temperatures under different excitations by master equations. The calculation reveals that at low temperature the kinetics of the system behaves as in direct-gap semiconductors, whereas at high temperature it shows metastability as in traditional indirect-gap semiconductors. Our results at low temperature are consistent with the experimental findings by Nagai {\em et al.} [Phys. Rev. B {\bf 68}, 081202 (R) (2003)]. The kinetics of the e-h system in diamonds at high temperature under both low and high excitations is also predicted.
dc.description7 pages, 8 figures, revised with some modifications in physics discussion, to be published in PRB
dc.identifierhttps://arxiv.org/abs/cond-mat/0408196
dc.identifierhttp://arxiv.org/abs/cond-mat/0408196
dc.identifierPhys. Rev. B 71, 035215 (2005).
dc.identifierdoi:10.1103/PhysRevB.71.035215
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95291
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleFormation and decay of electron-hole droplets in diamond
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