Raman Spectroscopy of Graphene under Uniaxial Stress: Phonon Softening and Determination of the Crystallographic Orientation

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dc.creatorHuang, Mingyuan
dc.creatorYan, Hugen
dc.creatorChen, Changyao
dc.creatorSong, Daohua
dc.creatorHeinz, Tony F.
dc.creatorHone, James
dc.date2008-12-11
dc.date.accessioned2026-07-07T12:12:21Z
dc.date.available2026-07-07T12:12:21Z
dc.descriptionWe present a systematic study of the Raman spectra of optical phonons in graphene monolayers under tunable uniaxial tensile stress. Both the G and 2D bands exhibit significant red shifts. The G band splits into two distinct sub-bands (G+, G-) because of the strain-induced symmetry breaking. Raman scattering from the G+ and G- bands shows a distinctive polarization dependence that reflects the angle between the axis of the stress and the underlying graphene crystal axes. Polarized Raman spectroscopy therefore constitutes a purely optical method for the determination of the crystallographic orientation of graphene.
dc.identifierhttps://arxiv.org/abs/0812.2258
dc.identifierhttp://arxiv.org/abs/0812.2258
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/210517
dc.subjectMaterials Science
dc.titleRaman Spectroscopy of Graphene under Uniaxial Stress: Phonon Softening and Determination of the Crystallographic Orientation
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