Resistance Quenching in Graphene Interconnects

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dc.creatorShao, Q.
dc.creatorLiu, G.
dc.creatorTeweldebrhan, D.
dc.creatorBalandin, A. A.
dc.date2008-05-03
dc.date.accessioned2026-07-07T09:40:30Z
dc.date.available2026-07-07T09:40:30Z
dc.descriptionWe investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits.
dc.identifierhttps://arxiv.org/abs/0805.0334
dc.identifierhttp://arxiv.org/abs/0805.0334
dc.identifierApplied Physics Letters, 92, 202108 (2008)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161506
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleResistance Quenching in Graphene Interconnects
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