Incoherent Transport through Molecules on Silicon in the vicinity of a Dangling Bond

dc.creatorRaza, Hassan
dc.creatorBevan, Kirk H.
dc.creatorKienle, Diego
dc.date2006-07-10
dc.date2008-01-28
dc.date.accessioned2026-07-07T08:56:34Z
dc.date.available2026-07-07T08:56:34Z
dc.descriptionWe theoretically study the effect of a localized unpaired dangling bond (DB) on occupied molecular orbital conduction through a styrene molecule bonded to a n++ H:Si(001)-(2x1) surface. For molecules relatively far from the DB, we find good agreement with the reported experiment using a model that accounts for the electrostatic contribution of the DB, provided we include some dephasing due to low lying phonon modes. However, for molecules within 10 angstrom to the DB, we have to include electronic contribution as well along with higher dephasing to explain the transport features.
dc.description9 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0607226
dc.identifierhttp://arxiv.org/abs/cond-mat/0607226
dc.identifierPhys. Rev. B 77, 035432 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.035432
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146655
dc.subjectOther Condensed Matter
dc.titleIncoherent Transport through Molecules on Silicon in the vicinity of a Dangling Bond
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