Sum Rules for the Optical and Hall Conductivity in Graphene

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dc.creatorGusynin, V. P.
dc.creatorSharapov, S. G.
dc.creatorCarbotte, J. P.
dc.date2007-01-03
dc.date2007-04-12
dc.date.accessioned2026-07-07T07:56:24Z
dc.date.available2026-07-07T07:56:24Z
dc.descriptionGraphene has two atoms per unit cell with quasiparticles exhibiting the Dirac-like behavior. These properties lead to interband in addition to intraband optical transitions and modify the $f$-sum rule on the longitudinal conductivity. The expected dependence of the corresponding spectral weight on the applied gate voltage $V_g$ in a field effect graphene transistor is $\sim {const}- |V_g|^{3/2}$. For $V_g =0$, its temperature dependence is $T^3$ rather than the usual $T^2$. For the Hall conductivity, the corresponding spectral weight is determined by the Hall frequency $ω_H$ which is linear in the carrier imbalance density $ρ$, and hence proportional to $V_g$, and is different from the cyclotron frequency for Dirac quasiparticles.
dc.description16 pages, RevTeX4, 4 EPS figures; v2: to match PRB version
dc.identifierhttps://arxiv.org/abs/cond-mat/0701053
dc.identifierhttp://arxiv.org/abs/cond-mat/0701053
dc.identifierPhys.Rev. B75 (2007) 165407
dc.identifierdoi:10.1103/PhysRevB.75.165407
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127293
dc.subjectMesoscale and Nanoscale Physics
dc.titleSum Rules for the Optical and Hall Conductivity in Graphene
dc.typetext

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