Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

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dc.creatorGlas, F.
dc.creatorHarmand, J. -C.
dc.creatorPatriarche, G.
dc.date2007-06-06
dc.date.accessioned2026-07-07T08:34:53Z
dc.date.available2026-07-07T08:34:53Z
dc.descriptionWe develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires, nucleation generally occurs at the outer edge of the solid/liquid interface (the triple phase line) rather than elsewhere at the solid/liquid interface. In the present case, this entails major differences between ZB and WZ nuclei. Depending on the pertinent interface energies, WZ nucleation is favored at high liquid supersaturation. This explains our systematic observation of ZB during the early stages of nanowire growth.
dc.description4 pages with 4 figures Submitted to Physical Review Letters
dc.identifierhttps://arxiv.org/abs/0706.0846
dc.identifierhttp://arxiv.org/abs/0706.0846
dc.identifierPhysical Review Letters 99, 146101 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.146101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/139592
dc.subjectMaterials Science
dc.titleWhy does wurtzite form in nanowires of III-V zinc-blende semiconductors?
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