Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

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dc.creatorCade, N. I.
dc.creatorGotoh, H.
dc.creatorKamada, H.
dc.creatorTawara, T.
dc.creatorSogawa, T.
dc.creatorOkamoto, H.
dc.creatorNakano, H.
dc.date2005-05-30
dc.date.accessioned2026-07-07T06:27:22Z
dc.date.available2026-07-07T06:27:22Z
dc.descriptionWe have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.
dc.description3 pages, 3 figures, submitted APL
dc.identifierhttps://arxiv.org/abs/cond-mat/0505708
dc.identifierhttp://arxiv.org/abs/cond-mat/0505708
dc.identifierdoi:10.1063/1.2093927
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97396
dc.subjectMesoscale and Nanoscale Physics
dc.titleCharged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition
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