Screening of Coulomb Impurities in Graphene

dc.creatorTerekhov, Ivan S.
dc.creatorMilstein, Alexander I.
dc.creatorKotov, Valeri N.
dc.creatorSushkov, Oleg P.
dc.date2007-08-31
dc.date2007-09-01
dc.date.accessioned2026-07-07T09:22:42Z
dc.date.available2026-07-07T09:22:42Z
dc.descriptionWe calculate exactly the vacuum polarization charge density in the field of a subcritical Coulomb impurity, $Z|e|/r$, in graphene. Our analysis is based on the exact electron Green's function, obtained by using the operator method, and leads to results that are exact in the parameter $Zα$, where $α$ is the "fine structure constant" of graphene. Taking into account also electron-electron interactions in the Hartree approximation, we solve the problem self-consistently in the subcritical regime, where the impurity has an effective charge $Z_{eff}$, determined by the localized induced charge. We find that an impurity with bare charge Z=1 remains subcritical, $Z_{eff} α< 1/2$, for any $α$, while impurities with $Z=2,3$ and higher can become supercritical at certain values of $α$.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/0708.4263
dc.identifierhttp://arxiv.org/abs/0708.4263
dc.identifierPhysical Review Letters 100, 076803 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.076803
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155469
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.subjectAtomic Physics
dc.titleScreening of Coulomb Impurities in Graphene
dc.typetext

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