Weak localization in monolayer and bilayer graphene

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dc.creatorKechedzhi, K.
dc.creatorMcCann, E.
dc.creatorFal'ko, Vladimir I.
dc.creatorSuzuura, H.
dc.creatorAndo, T.
dc.creatorAltshuler, B. L.
dc.date2009-03-10
dc.date.accessioned2026-07-07T12:51:33Z
dc.date.available2026-07-07T12:51:33Z
dc.descriptionWe describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.
dc.descriptioncorrected misprints present in the published version
dc.identifierhttps://arxiv.org/abs/0903.1848
dc.identifierhttp://arxiv.org/abs/0903.1848
dc.identifierEur. Phys. J. Special Topics 148, 39-54 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/223022
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleWeak localization in monolayer and bilayer graphene
dc.typetext

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