Generating Spin Currents in Semiconductors with the Spin Hall Effect

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dc.creatorSih, V.
dc.creatorLau, W. H.
dc.creatorMyers, R. C.
dc.creatorHorowitz, V. R.
dc.creatorGossard, A. C.
dc.creatorAwschalom, D. D.
dc.date2006-05-27
dc.date.accessioned2026-07-07T07:09:14Z
dc.date.available2026-07-07T07:09:14Z
dc.descriptionWe investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0605672
dc.identifierhttp://arxiv.org/abs/cond-mat/0605672
dc.identifierPhys. Rev. Lett. 97, 096605 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.096605
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/110986
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleGenerating Spin Currents in Semiconductors with the Spin Hall Effect
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