A current-voltage model for Schottky-barrier graphene based transistors

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dc.creatorJimenez, David
dc.date2007-12-11
dc.date2008-07-15
dc.date.accessioned2026-07-07T09:49:57Z
dc.date.available2026-07-07T09:49:57Z
dc.descriptionA low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance controlled devices, self-consistent calculations of the electrostatic potential can be skipped. Instead, analytical closed-form electrostatic potential from Laplace's equation yields accurate results compared with that obtained by self-consistent Non-Equilibrium Green's Functions (NEGF) method. The model includes both tunnelling current through the Schottky barrier (SB) at the contact interfaces and thermionic current above the barrier, properly capturing the effect of arbitrary physical and electrical parameters.
dc.description8 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0712.1687
dc.identifierhttp://arxiv.org/abs/0712.1687
dc.identifierNanotechnology 19 (2008) 345204
dc.identifierdoi:10.1088/0957-4484/19/34/345204
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164780
dc.subjectMesoscale and Nanoscale Physics
dc.titleA current-voltage model for Schottky-barrier graphene based transistors
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