Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature

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dc.creatorKönig, P.
dc.creatorZeitler, U.
dc.creatorKönemann, J.
dc.creatorSchmidt, T.
dc.creatorHaug, R. J.
dc.date2000-09-22
dc.date.accessioned2026-07-07T02:38:48Z
dc.date.available2026-07-07T02:38:48Z
dc.descriptionWe have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.
dc.description2 pages, 3 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000
dc.identifierhttps://arxiv.org/abs/cond-mat/0009349
dc.identifierhttp://arxiv.org/abs/cond-mat/0009349
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16814
dc.subjectMesoscale and Nanoscale Physics
dc.titleResonant tunneling through zero-dimensional impurity states: Effects of a finite temperature
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