Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Simple item page
dc.creatorKim, Yongmin
dc.creatorMunteanu, F. M.
dc.creatorPerry, C. H.
dc.creatorLee, X.
dc.creatorJiang, H. W.
dc.creatorSimmons, J. A.
dc.creatorLee, Kyu-Seok
dc.date1999-05-17
dc.date1999-05-19
dc.date.accessioned2026-07-07T03:13:29Z
dc.date.available2026-07-07T03:13:29Z
dc.descriptionCoulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to Mott type localizations. Since a SHJ has an open valence band structure, these bound states are a unique property of the dynamic movement of the valence holes in strong magnetic fields.
dc.identifierhttps://arxiv.org/abs/cond-mat/9905243
dc.identifierhttp://arxiv.org/abs/cond-mat/9905243
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29315
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleCoulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions
dc.typetext

Files

Collections

arXiv