On the Possibility of an Electronic-structure Modulation Transistor
| dc.creator | Raza, Hassan | |
| dc.creator | Raza, Tehseen Z. | |
| dc.creator | Hou, Tuo-Hung | |
| dc.creator | kan, Edwin C. | |
| dc.date | 2008-11-30 | |
| dc.date | 2009-02-24 | |
| dc.date.accessioned | 2026-07-07T12:45:51Z | |
| dc.date.available | 2026-07-07T12:45:51Z | |
| dc.description | We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state. | |
| dc.identifier | https://arxiv.org/abs/0812.0123 | |
| dc.identifier | http://arxiv.org/abs/0812.0123 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/221188 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | On the Possibility of an Electronic-structure Modulation Transistor | |
| dc.type | text |