High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

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dc.creatorMolinari, Anna S.
dc.creatorAlves, Helena
dc.creatorChen, Zhihua
dc.creatorFacchetti, Antonio
dc.creatorMorpurgo, Alberto F.
dc.date2009-02-05
dc.date.accessioned2026-07-07T12:38:13Z
dc.date.available2026-07-07T12:38:13Z
dc.descriptionWe have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO$_{2}$), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm$^{2}$/Vs in vacuum and 3 cm$^{2}$/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.
dc.descriptionpublished online in JACS
dc.identifierhttps://arxiv.org/abs/0902.0875
dc.identifierhttp://arxiv.org/abs/0902.0875
dc.identifierdoi:10.1021/ja809848y
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/218681
dc.subjectMaterials Science
dc.titleHigh Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors
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