Spin switch and spin amplifier: magnetic bipolar transistor in the saturation regime

Simple item page
dc.creatorFabian, Jaroslav
dc.creatorZutic, Igor
dc.date2004-06-07
dc.date.accessioned2026-07-07T02:58:32Z
dc.date.available2026-07-07T02:58:32Z
dc.descriptionIt is shown that magnetic bipolar transistors (MBT) can amplify currents even in the saturation regime, in which both the emitter-base and collector-base junctions are forward biased. The collector current and the current gain can change sign as they depend on the relative orientation of the equilibrium spin in the base and on the nonequilibrium spin in the emitter and collector. The predicted phenomena should be useful for electrical detection of nonequilibrium spins in semiconductors, as well as for magnetic control of current amplification and for current switching.
dc.description5 pages, 4 figures; paper to a presentation at XXXIII International School on the Physics of Semiconductor Compounds Jaszowiec 2004
dc.identifierhttps://arxiv.org/abs/cond-mat/0406170
dc.identifierhttp://arxiv.org/abs/cond-mat/0406170
dc.identifierActa Physica Polonica A 106, 109 (2004)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24129
dc.subjectOther Condensed Matter
dc.titleSpin switch and spin amplifier: magnetic bipolar transistor in the saturation regime
dc.typetext

Files

Collections

arXiv