Antilocalization in gated 2D quantum well structures with composition gradient

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dc.creatorGermanenko, A. V.
dc.creatorMinkov, G. M.
dc.creatorRut, O. E.
dc.creatorSherstobitov, A. A.
dc.creatorZvonkov, B. N.
dc.date2003-11-11
dc.date.accessioned2026-07-07T02:54:42Z
dc.date.available2026-07-07T02:54:42Z
dc.descriptionLow-field magnetoconductivity caused by the quantum interference is studied in the gated 2D quantum well structures with the composition gradient. It is shown that the Dresselhaus mechanism well describes an antilocalization minimum on the conductivity-magnetic field curve.
dc.description8 pages, 4 figures, to be published in International Journal of Nanoscience
dc.identifierhttps://arxiv.org/abs/cond-mat/0311238
dc.identifierhttp://arxiv.org/abs/cond-mat/0311238
dc.identifierInt.J.Nanoscience 2, 543 (2003)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22660
dc.subjectCondensed Matter
dc.titleAntilocalization in gated 2D quantum well structures with composition gradient
dc.typetext

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