Quantum nature of dislocations in pure bcc Helium

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dc.creatorGov, Nir
dc.date2001-05-29
dc.date.accessioned2026-07-07T02:41:36Z
dc.date.available2026-07-07T02:41:36Z
dc.descriptionRecent experiments show the thermal growth of dislocation lines in unlta-pure bcc $^{3}$He. The activation energy for the growth of the dislocation lines is found to agree with the activation energy of mass diffusion. We propose that these dislocations are topological defects in the phase of the complex order-parameter which describes the dynamic zero-point atomic correlations, unique to the bcc phase. These is a shear strain field associated with these topological defects. We show that the smallest topological defect is a localized excitation, a loop-defect, which leads to the exponential growth of the dislocation lines with temperature.
dc.description7 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0105578
dc.identifierhttp://arxiv.org/abs/cond-mat/0105578
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17804
dc.subjectCondensed Matter
dc.titleQuantum nature of dislocations in pure bcc Helium
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