Raman scattering near a quantum critical point
| dc.creator | Freericks, J. K. | |
| dc.creator | Devereaux, T. P. | |
| dc.date | 2000-11-01 | |
| dc.date.accessioned | 2026-07-07T02:39:13Z | |
| dc.date.available | 2026-07-07T02:39:13Z | |
| dc.description | Electronic Raman scattering experiments in a wide variety of materials (ranging from mixed-valence materials to Kondo insulators to high-temperature superconductors) show anomalous behavior in the B_{1g} channel when the system is on the insulating side of the metal-insulator transition. Here we provide an exact solution for B_{1g} Raman scattering in the Falicov-Kimball model, show how these theoretical results are universal near the metal-insulator transition and show how they produce the two main features seen in experiments near a quantum critical point: (i) the rapid appearance of low-energy spectral weight as T is increased from 0 and (ii) the existence of an isosbestic point (where the Raman response is independent of T at a characteristic frequency). | |
| dc.description | 5 pages, 6 figures, ReVTeX | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0011013 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0011013 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/16963 | |
| dc.subject | Superconductivity | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Raman scattering near a quantum critical point | |
| dc.type | text |