A Review of Liquid Phase Epitaxial Grown Gallium Arsenide

Simple item page
dc.creatorAlexiev, D.
dc.creatorProkopovich, D. A.
dc.creatorThomson, S.
dc.creatorMo, L.
dc.creatorRosenfeld, A. B.
dc.creatorReinhard, M.
dc.date2004-08-30
dc.date.accessioned2026-07-07T03:00:02Z
dc.date.available2026-07-07T03:00:02Z
dc.descriptionLiquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, it is interesting to note that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. This is followed by a report on LPE GaAs growth at the Australian Nuclear Science and Technology Organisation (ANSTO).
dc.description31 page review on Growth of Epitaxial Gallium Arsenide (GaAs). To be in 4 parts, this is parts 1&2. Part 1 is historical background, Part 2 is history of growth at ANSTO
dc.identifierhttps://arxiv.org/abs/cond-mat/0408653
dc.identifierhttp://arxiv.org/abs/cond-mat/0408653
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24737
dc.subjectMaterials Science
dc.titleA Review of Liquid Phase Epitaxial Grown Gallium Arsenide
dc.typetext

Files

Collections

arXiv