Thomas-Fermi Screening in Graphene
| dc.creator | Salis, M. | |
| dc.date | 2007-01-05 | |
| dc.date | 2007-01-23 | |
| dc.date.accessioned | 2026-07-07T07:42:15Z | |
| dc.date.available | 2026-07-07T07:42:15Z | |
| dc.description | The in-plane static screening of the field originated by a charge placed in a graphene sheet is investigated. A self-consistent field equation in the real space domain is obtained by using a suitable Thomas-Fermi procedure. Exact and approximated (for qualitative considerations) solutions are presented. In the case of a charged sheet, the screened potential presents a tail dependent on the free carrier density whose importance is connected with the local features of the impurity system. Early conclusions about Thomas-Fermi screening in graphene are revised. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0701108 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0701108 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/122378 | |
| dc.subject | Other Condensed Matter | |
| dc.title | Thomas-Fermi Screening in Graphene | |
| dc.type | text |