Wetting Phase Transition at the Surface of Liquid Ga-Bi alloys: An X-ray Reflectivity Study

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dc.creatorTostmann, Holger
dc.creatorShpyrko, Oleg
dc.creatorPershan, Peter S.
dc.creatorDimasi, Elaine
dc.creatorOcko, Ben
dc.creatorDeutsch, Moshe
dc.date2004-07-11
dc.date.accessioned2026-07-07T06:30:22Z
dc.date.available2026-07-07T06:30:22Z
dc.descriptionX-ray reflectivity measurements of the binary liquid Ga-Bi alloy reveal a dramatically different surface structure above and below the monotectic temperature $T_{mono}=222^{\circ}$ C. A Gibbs-adsorbed Bi monolayer resides at the surface at both regimes. However, a 30 Å thick, Bi-rich wetting film intrudes between the Bi monolayer and the Ga-rich bulk for $T > T_{mono}$. The internal structure of the wetting film is determined with Å resolution, showing a theoretically unexpected concentration gradient and a highly diffuse interface with the bulk phase.
dc.description5 RevTex pages, 3 figures, Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0407270
dc.identifierhttp://arxiv.org/abs/cond-mat/0407270
dc.identifierPhysical Review Letters 84, 4385 (2000)
dc.identifierdoi:10.1103/PhysRevLett.84.4385
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98320
dc.subjectStatistical Mechanics
dc.subjectMaterials Science
dc.titleWetting Phase Transition at the Surface of Liquid Ga-Bi alloys: An X-ray Reflectivity Study
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