Graphene Segregated on Ni surfaces and Transferred to Insulators

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dc.creatorYu, Qingkai
dc.creatorLian, Jie
dc.creatorSiriponglert, Sujitra
dc.creatorLi, Hao
dc.creatorChen, Yong
dc.creatorPei, Shin-Shem
dc.date2008-04-10
dc.date2008-12-09
dc.date.accessioned2026-07-07T12:09:55Z
dc.date.available2026-07-07T12:09:55Z
dc.descriptionWe report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.
dc.description7 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0804.1778
dc.identifierhttp://arxiv.org/abs/0804.1778
dc.identifierdoi:10.1063/1.2982585
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209790
dc.subjectMaterials Science
dc.titleGraphene Segregated on Ni surfaces and Transferred to Insulators
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