Ab initio shallow acceptor levels in gallium nitride
| dc.creator | Fiorentini, V. | |
| dc.creator | Bernardini, F. | |
| dc.creator | Bosin, A. | |
| dc.creator | Vanderbilt, D. | |
| dc.date | 1996-10-07 | |
| dc.date.accessioned | 2026-07-07T09:11:12Z | |
| dc.date.available | 2026-07-07T09:11:12Z | |
| dc.description | Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy $\sim$ 0.06 eV); $Mg_{Ga}$ and $Zn_{Ga}$ are mid-deep acceptors (0.23 eV and 0.33 eV respectively); $Ca_{Ga}$ and $Cd_{Ga}$ are deep acceptors ($\sim$0.65 eV); $Si_N$ is a midgap trap with high formation energy; finally, contrary to recent claims, $C_N$ is a deep acceptor (0.65 eV). Interstitials and heteroantisites are energetically not competitive with substitutional incorporation. | |
| dc.description | 4 pages, to appear in "The Physics of Semiconductors" | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9610045 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9610045 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/151597 | |
| dc.subject | Materials Science | |
| dc.title | Ab initio shallow acceptor levels in gallium nitride | |
| dc.type | text |