Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

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dc.creatorGiridhar, A.
dc.creatorVerjus, F.
dc.creatorMarty, F.
dc.creatorBosseboeuf, A.
dc.creatorBourouina, T.
dc.date2007-11-21
dc.date.accessioned2026-07-07T08:45:36Z
dc.date.available2026-07-07T08:45:36Z
dc.descriptionThis paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/degrees C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/degrees C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0711.3288
dc.identifierhttp://arxiv.org/abs/0711.3288
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2006, Stresa, Lago Maggiore : Italie (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143012
dc.subjectOther Computer Science
dc.titleElectrostatically-Driven Resonator on Soi with Improved Temperature Stability
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