Angular dependence of the tunneling anisotropic magnetoresistance

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Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser {\it et al.}, Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated.
6 pages, 1 figure

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Mesoscale and Nanoscale Physics, Other Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/227355

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0904.2467
 http://arxiv.org/abs/0904.2467

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arXiv