Single electron spin and its coherence in Si quantum computer architecture

dc.creatorCalderon, M. J.
dc.creatorKoiller, Belita
dc.creatorSarma, S. Das
dc.date2006-10-03
dc.date.accessioned2026-07-07T08:05:37Z
dc.date.available2026-07-07T08:05:37Z
dc.descriptionThe possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited state require smaller fields and faster tunneling times, and are therefore suitable for spin-to-charge conversion measurements. We also propose a measurement scheme that would render statistical (ensemble) estimates of the spin coherence at the Si/SiO2 interface.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0610089
dc.identifierhttp://arxiv.org/abs/cond-mat/0610089
dc.identifierPhysical Review B 75, 161304(R) (2007).
dc.identifierdoi:10.1103/PhysRevB.75.161304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130334
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleSingle electron spin and its coherence in Si quantum computer architecture
dc.typetext

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