High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

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dc.creatorTan, Guotai
dc.creatorDai, S.
dc.creatorDuan, P.
dc.creatorLu, H. B.
dc.creatorXie, K.
dc.creatorZhou, Y. L.
dc.creatorChen, Z. H.
dc.date2003-01-21
dc.date.accessioned2026-07-07T02:49:17Z
dc.date.available2026-07-07T02:49:17Z
dc.descriptionThe electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic state of the thin film underwent a discontinuous variation between 350 K and 450 K, indicating that the metal-semiconductor transition was probably a discontinuous phase transition. At high temperature (450 to 1000 K), both the binding energies of the atomic core level and valence-band of the film shifted up with increasing the temperature, while their line-widths became narrower, which were different from that observed at low temperature. These phenomena are attributed to the crystal lattice expansion and related Jahn-Teller distortion varying with temperature.
dc.description10 pages, 4 figures. submitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0301385
dc.identifierhttp://arxiv.org/abs/cond-mat/0301385
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20731
dc.subjectStrongly Correlated Electrons
dc.titleHigh temperature electronic behavior of La0.8Sr0.2MnO3 thin film
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