Supersensitive avalanche silicon drift photodetector
| dc.creator | Sadygov, Z. Ya. | |
| dc.creator | Suleimanov, M. K. | |
| dc.creator | Bokova, T. Yu. | |
| dc.date | 1999-09-10 | |
| dc.date.accessioned | 2026-07-07T03:38:05Z | |
| dc.date.available | 2026-07-07T03:38:05Z | |
| dc.description | Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a drain contact to provide a drift of multiplicated charge carriers along the semiconductor surface. A high gain(more than 10^4) of photocurrent was achived due to the local negative feedback effect realizied on the Si-SiO_2 boundary. Special attention is paid to the possibilities of development of a supersensitive avalanche CCD (charge coupled device) for detection of individual photons in visible and ultraviolet spectral regions. Experimental results obtained with a two-element CCD prototype are discussed. | |
| dc.description | 3 pages | |
| dc.identifier | https://arxiv.org/abs/hep-ex/9909017 | |
| dc.identifier | http://arxiv.org/abs/hep-ex/9909017 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/38379 | |
| dc.subject | High Energy Physics - Experiment | |
| dc.title | Supersensitive avalanche silicon drift photodetector | |
| dc.type | text |