New Memory Concept for Superconducting Electronics

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dc.creatorHeld, R.
dc.creatorXu, J.
dc.creatorSchmehl, A.
dc.creatorSchneider, C. W.
dc.creatorMannhart, J.
dc.creatorBeasley, M. R.
dc.date2005-06-24
dc.date2005-06-27
dc.date.accessioned2026-07-07T03:05:47Z
dc.date.available2026-07-07T03:05:47Z
dc.descriptionA new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. First memory cells have been implemented using 3 $μ$m-Nb-technology and permalloy dots. Nonvolatile data storage at 300 K was demonstrated.
dc.description8 Pages, 5 Figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0506647
dc.identifierhttp://arxiv.org/abs/cond-mat/0506647
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26581
dc.subjectSuperconductivity
dc.titleNew Memory Concept for Superconducting Electronics
dc.typetext

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