Integrated RF MEMS/CMOS Devices
| dc.creator | Mansour, R. R. | |
| dc.creator | Fouladi, S. | |
| dc.creator | Bakeri-Kassem, M. | |
| dc.date | 2008-05-07 | |
| dc.date.accessioned | 2026-07-07T12:18:36Z | |
| dc.date.available | 2026-07-07T12:18:36Z | |
| dc.description | A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS parallel-plate capacitors with a high quality factor and a very compact size. Simulations and measured results are presented for several MEMS/CMOS capacitors. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5 GHz is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MEMS/CMOS capacitors with a quality factor exceeding 20. The tunable filter occupies a chip area of 1.2 x 2.1 mm2. | |
| dc.description | Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838) | |
| dc.identifier | https://arxiv.org/abs/0805.0858 | |
| dc.identifier | http://arxiv.org/abs/0805.0858 | |
| dc.identifier | Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/212465 | |
| dc.subject | Other Computer Science | |
| dc.title | Integrated RF MEMS/CMOS Devices | |
| dc.type | text |