Effect of disorder on the Kondo behavior of thin Cu(Mn) films

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dc.creatorJacobs, T. M.
dc.creatorGiordano, N.
dc.date1999-01-11
dc.date.accessioned2026-07-07T03:12:36Z
dc.date.available2026-07-07T03:12:36Z
dc.descriptionWe have studied the influence of disorder on the Kondo effect in thin films of Cu(Mn), i.e., Cu doped with a small amount of Mn. We find that the Kondo contribution to the resistivity is suppressed when the elastic mean-free-path, $λ$, is reduced. While this is qualitatively similar to results found previously by our group in a different material, our new experiments reveal in detail how this suppression depends on both film thickness and $λ$. These results are compared with the theory of Martin, Wan, and Phillips. While there is general qualitative agreement with this theory, there appear to be some quantitative discrepancies.
dc.description15 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9901092
dc.identifierhttp://arxiv.org/abs/cond-mat/9901092
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28970
dc.subjectMesoscale and Nanoscale Physics
dc.titleEffect of disorder on the Kondo behavior of thin Cu(Mn) films
dc.typetext

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