$L$-valley electron $g$ factor in bulk GaAs and AlAs

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dc.creatorShen, K.
dc.creatorWeng, M. Q.
dc.creatorWu, M. W.
dc.date2008-06-07
dc.date2008-08-19
dc.date.accessioned2026-07-07T10:05:35Z
dc.date.available2026-07-07T10:05:35Z
dc.descriptionWe study the Landé $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Landé factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.
dc.description4 pages, 1 figure, To be published in J. App. Phys. 104, 2008
dc.identifierhttps://arxiv.org/abs/0806.1252
dc.identifierhttp://arxiv.org/abs/0806.1252
dc.identifierJ. Appl. Phys. 104, 063719 (2008).
dc.identifierdoi:10.1063/1.2986151
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170050
dc.subjectMaterials Science
dc.title$L$-valley electron $g$ factor in bulk GaAs and AlAs
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